optocoupler, phototransistor output, with base connection www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81864 1 rev. 1.0, 11-mar-08 4n25-x000/4n26-x000/4 n27-x000/4n28-x000 vishay semiconductors description the 4n25 family is an industry standard single channel phototransistor coupler. this family includes the 4n25/4n26/4n27/4n28. each optocoupler consists of gallium arsenide infrared led and a silicon npn phototransistor. these couplers are underwriters laboratories (ul) listed to comply with a 5300 v rms isolation test voltage. this isolation performance is accomplished through special vishay manufacturing process. compliance to din en 60747-5-2 (vde 0884)/ din en 60747-5-5 pending partial discharge isolation specification is availa ble by ordering option 1. these isolation processes and the vishay iso9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. the devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. note for additional design information see application note 45 normalized curves features ? isolation test voltage 5300 v rms ? interfaces with co mmon logic families ? input-output coupling capacitance < 0.5 pf ? industry standard dual-in-line 6-pin package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ac mains detection ? reed relay driving ? switch mode power supply feedback ? telephone ring detection ? logic ground isolation ? logic coupling with high frequency noise rejection agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-2 (vde 0884) din en 60747-5-5 pending available with option 1 note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks 4n25-x000 ctr > 20 %, dip-6 4n26-x000 ctr > 20 %, dip-6 4n27-x000 ctr > 10 %, dip-6 4n28-x000 ctr > 10 %, dip-6 4n25-x006 ctr > 20 %, dip-6 400 mil (option 6) 4n25-x007 ctr > 20 %, smd-6 (option 7) 4n25-x009 ctr > 20 %, smd-6 (option 9) 4n26-x006 ctr > 20 %, dip-6 400 mil (option 6) 4n26-x007 ctr > 20 %, smd-6 (option 7) 4N26-X009 ctr > 20 %, smd-6 (option 9) 4n27-x007 ctr > 10 %, smd-6 (option 7) 4n27-x009 ctr > 10 %, smd-6 (option 9) 4n28-x009 ctr > 10 %, smd-6 (option 9)
document number: 81864 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 11-mar-08 2 4n25-x000/4n26-x000/4n27-x000/4n28-x000 optocoupler, phototransistor output, with base connection vishay semiconductors notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to wave profile for solderi ng conditions for th rough hole devices. absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current t 10 s i fsm 2.5 a power dissipation p diss 100 mw output collector emitter breakdown voltage v ceo 70 v emitter base breakdown voltage v ebo 7v collector current i c 50 ma t 1.0 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index di n iec 112/vde0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature (2) max.10 s dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics (1) parameter test condition part symbol min. typ. max. unit input forward voltage (2) i f = 50 ma v f 1.3 1.5 v reverse current (2) v r = 3.0 v i r 0.1 100 a capacitance v r = 0 v c o 25 pf output collector base breakdown voltage (2) i c = 100 a bv cbo 70 v collector emitter breakdown voltage (2) i c = 1.0 ma bv ceo 30 v emitter collector breakdown voltage (2) i e = 100 a bv eco 7v i ceo (dark) (2) v ce = 10 v, (base open) 4n25 5 50 na 4n26 5 50 na 4n27 5 50 na 4n28 10 100 na i cbo (dark) (2) v cb = 10 v, (emitter open) 2.0 20 na collector emitter capacitance v ce = 0 c ce 6.0 pf
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81864 3 rev. 1.0, 11-mar-08 4n25-x000/4n26-x000/4 n27-x000/4n28-x000 vishay semiconductors optocoupler, phototransistor output, with base connection notes (1) t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values are characteristic s of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. (2) jedec registered values are 2500 v, 1500 v, 1500 v and 500 v for the 4n25, 4n26, 4n27 and 4n28 respectively. note indicates jedec registered values. typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr vs. led current coupler isolation test voltage (2) peak, 60 hz v io 5300 v saturation voltage, collector emitter i ce = 2.0 ma, i f = 50 ma v ce(sat) 0.5 v resistance, input output (2) v io = 500 v r io 100 g capacitance, input output f = 1 mhz c io 0.5 pf current transfer ratio parameter test condition part symbol min. typ. max. unit dc current transfer ratio v ce = 10 v, i f = 10 ma 4n25 ctr dc 20 50 % 4n26 ctr dc 20 50 % 4n27 ctr dc 10 30 % 4n28 ctr dc 10 30 % switching characteristics parameter test condition symbol min. typ. max. unit rise and fall times v ce = 10 v, i f = 10 ma, r l = 100 t r , t f 2.0 s electrical characteristics (1) parameter test condition part symbol min. typ. max. unit i4n25_01 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f -for w ard v oltage ( v ) t a = - 55 c t a = 25 c t a = 8 5 c i4n25_02 0.0 0.5 1.0 1.5 0 10 100 i f - led c u rrent (ma) n ctr n ctr(sat) n ctr - n ormalized ctr ctr ce(sat) = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c t a = 25 c n ormalized to: 1
document number: 81864 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 11-mar-08 4 4n25-x000/4n26-x000/4n27-x000/4n28-x000 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 3 - normalized non-saturated and saturated ctr vs. led current fig. 4 - normalized non-saturated and saturated ctr vs. led current fig. 5 - normalized non-saturated and saturated ctr vs. led current fig. 6 - collector emitter current vs. temperature and led current fig. 7 - collector emitter le akage current vs. temperature fig. 8 - normalized ctrcb vs. led current and temperature i4n25_03 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr ctr ce(sat) v ce = 0.4 v n ctr n ctr(sat) t a = 50 c n ormalized to: v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_04 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr n ctr(sat) t a = 70 c n ormalized to: ctr ce(sat) v ce = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_05 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr n ctr(sat) t a = 8 5 c n ormalized to: ctr ce(sat) v ce = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_06 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 8 5 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c i4n25_07 100 8 0 60 40 20 0 - 20 10 - 2 10 - 1 10 0 10 1 10 2 10 3 10 4 10 5 t am b - am b ient temperat u re (c) i ceo - collector emitter (na) typical v ce = 10 v i4n25_0 8 0.0 0.5 1.0 1.5 25 c 50 c 70 c i f - led c u rrent (ma) n ctrc b - n ormalized ctrc b 0.1 1 10 100 n ormalized to: v cb = 9.3 v , i f = 10 ma, t a = 25 c
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81864 5 rev. 1.0, 11-mar-08 4n25-x000/4n26-x000/4 n27-x000/4n28-x000 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 9 - normalized photocurrent vs. i f and temperature fig. 10 - normalized non-saturated h fe vs. base current and temperature fig. 11 - normalized h fe vs. base current and temperature fig. 12 - propagation delay vs. collector load resistor fig. 13 - switching timing fig. 14 - switching schematic i4n25_09 0. 0.01 1 1 10 i f - led c u rrent (ma) n ormalized photoc u rrent 0.1 1 10 100 i f = 10 ma, t a = 25 c n i b , t a = - 20 c n ormalized to: n i b , t a = 20 c n i b , t a = 50 c n i b , t a = 70 c i4n25_10 0.4 0.6 1.0 1.2 i b - base c u rrent ( a) 1101001000 i b = 20 a, v ce = 10 v , t a = 25 c 25 c 70 c - 20 c n hfe - n ormalized hfe 0. 8 n ormalized to: i4n25_11 0.0 0.5 1.0 1.5 25 c - 20 c 50 c 70 c n hfe(sat) - n ormalized sat u rated hfe 1 10 100 1000 v ce = 10 v , i b = 20 a t a = 25 c v ce = 0.4 v i b - base c u rrent ( a) n ormalized to: i4n25_12 1 10 100 1000 r l - collector load resistor (k ) t plh - propagation delay ( s) 2.5 2.0 1.5 1.0 0.1 1 10 100 i f = 10 ma, t a = 25 c v cc = 5.0 v , v th = 1.5 v t plh t phl t phl - propagation delay ( s) i4n25_13 i f t r = 1.5 v v o t d t s t f t phl t plh v th i4n25_14 v cc = 5.0 v f = 10 khz df = 50 % r l v o i f = 10 ma
document number: 81864 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 11-mar-08 6 4n25-x000/4n26-x000/4n27-x000/4n28-x000 optocoupler, phototransistor output, with base connection vishay semiconductors package dimensions in millimeters for 4n25/26/27..... see dil300-6 package dimension in the package section. for 4n28 and for products with an option designator (e.g. 4n25 -x001 or 4n26-x007)..... see dip-6 package dimensions in the package section. dil300-6 package dimensions dip-6 package dimensions 14770 6.4 max. 7.62 0.1 b 0.4 b technical dra w ings according to di n specifications w eight: ca. 0.50 g creepage distance: > 6 mm air path: > 6 mm after mo u nting on pc b oard 1 2 3 6 5 4 8 . 8 max. 8 .6 max. 1.54 4.2 0.1 2.54 nom. 5.0 8 nom. 0.5 8 max. 3.3 0.5 min. 0.3 a a 9 0.6 0.3 max. i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81864 7 rev. 1.0, 11-mar-08 4n25-x000/4n26-x000/4 n27-x000/4n28-x000 vishay semiconductors optocoupler, phototransistor output, with base connection min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0(4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
document number: 81864 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 11-mar-08 8 4n25-x000/4n26-x000/4n27-x000/4n28-x000 optocoupler, phototransistor output, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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